There are seven versions of each MSB series, with Maximum Recurrent Peak Reverse Voltages and Maximum DC Blocking Voltages ranging from 50V to 1000V and a Maximum RMS Bridge Input Voltage from 35V to 700V.
Montreal, Canada, 2020-Feb-11 — /EPR Network/ — Future Electronics, a global leading distributor of electronic components, is featuring high-performance and reliable SiC Schottky Diodes from [read full press release…]
Indium Gallium Arsenide (InGaAs) is a room temperature semiconductor made up of Gallium Arsenide and Indium Arsenide. The InGaAs semiconductor has wide applications in photonics [read full press release…]
Indium Gallium Arsenide (InGaAs) is a room temperature semiconductor made up of Gallium Arsenide and Indium Arsenide. The InGaAs semiconductor has wide applications in photonics [read full press release…]
