Global GaN RF Devices Market Research Report: Industry Insights and Forecast Till 2026

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Dublin 2, Ireland, 2018-Jun-21 — /EPR Network/ — With a prime focus on gan rf devices industry, research analysts of Fact. MR has publicized a comprehensive study to its online repository. This in-depth study is headlined as “GaN RF Devices Market Forecast, Trend Analysis & Competition Tracking – Global Review 2017 to 2026” which discusses the historic and current scenario of the global market, along with the future prospects it holds for a 10 year assessment period, 2017-2016. For the benefit of the investors of the report, this research focuses on the drivers and restraints anticipated to impact the demand for gan rf devices in the coming years. Along with these insights, the report provides the readers crucial insights on the strategies implemented by leading companies to remain in the lead of this competitive market.

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According to Fact.MR’s new report, the global market for GaN RF devices is poised to register a splendid rise through the forecast period (2017-2026). Over US$ 1,600 Mn worth of GaN RF devices are estimated to be sold around the world by 2026-end.

4 Key Projections on Future of GaN RF Devices Market for Forecast Period 2017-2026

1. On the basis of end-user, telecommunications will remain dominant, with revenues poised to account for nearly half share of the market by 2026-end. Aerospace and Defense, and Automotive are also expected to hold major revenue shares of the market during the forecast period. Sales of GaN RF devices for medical devices and industrial end-uses are projected to exhibit a parallel expansion through 2026. Revenues from industrial end-users of GaN RF devices will continue to be sluggish.

2. Wireless infrastructure will continue to be the most lucrative application of GaN RF devices, with revenues set to account for over two-fifth market share by 2026-end. PV inverter is also expected to remain a financially worthwhile application of GaN RF devices.

3. GaN RF devices sales for application in hybrid and EV components are projected to ride on the highest CAGR through 2026. HEV charging equipment and wireless infrastructure applications are expected to witness expansion at equal CAGRs through 2026. Satellite communication and CATV will continue to be the least lucrative applications of GaN RF devices.

4. On the basis of product type, discrete GaN RF devices are anticipated to remain dominant in the market, in terms of revenues. In addition, revenues from discrete GaN RF devices are projected to hold more than four-fifth market share by 2026-end. Demand for module GaN RF devices are expected to remain sluggish in the market.

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APEJ to Remain Dominant Market for GaN RF Devices

The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.

Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.

Competition Tracking

Most of the vendors in the GaN RF devices market have similar offerings, competing primarily in terms of key factors including support services, performance & quality, price and innovation. Requirement of enormous capital investment for development, innovation, and research for making advancements in GaN RF Devices remains a major concern for new market entrants. This will further intensify the competition between existing players. Key market participants mapped by Fact.MR’s report include Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, and Infineon.

Table of Content:

1. Global Outlook

2. Global GaN RF Devices Market – Executive Summary

3. Global GaN RF Devices Market Overview
3.1. Introduction
3.1.1. Global GaN RF Devices Market Taxonomy
3.1.2. Global GaN RF Devices Market Definition
3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026
3.2.1. Global GaN RF Devices Market Y-o-Y Growth
3.3. Global GaN RF Devices Market Dynamics
3.4. SiC and GaN-on-Si Device Market Comparison
3.5. Semiconductor Industry Segmentation
3.6. Power Discretes and Modules Competitive Comparison
3.7. WBG Material Cost and Wafer Size Comparison
3.8. Application for GaN Devices in RF Electronic System
3.9. Key Participants Market Presence (Intensity Map) By Region

4. Global GaN RF Devices Market Analysis and Forecast 2012-2026 
4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026
4.1.1. Module Market Size and Forecast, 2012-2026
4.1.1.1. Revenue (US$ Mn) Comparison, By Region
4.1.1.2. Market Share Comparison, By Region
4.1.1.3. Y-o-Y growth Comparison, By Region

Continued….

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