GaN RF Devices Market Expected to Deliver Dynamic Progression until 2026

Posted on 2018-11-06 by Mark Hub in Technology // 0 Comments

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Rockville, US, 2018-Nov-06 — /EPR Network/ — GaN or gallium nitride power semiconductor technology has enabled significant improvements in performance levels of RF devices. By curtailing device parasitic elements, utilizing shorter gate lengths, and adhering to higher operating voltages, GaN technology has enhanced output-power densities, and improved efficiencies of RF devices.

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GaN RF Technology – An Ideal Selection for Network Service Providers

Proliferation of next generation LTE wireless networks is considered to be a key factor propelling demand for GaN RF devices. Continuous rise in data consumption has fuelled expansion of commercial networks, prompting network carriers in adopting next generation LTE networks including 4G and 5G. High frequency data bandwidth connections of GaN RF technology has made it an ideal selection for network service providers. Deployment of GaN RF devices is likely to enable LTE devices in providing higher speeds to allow consumers download & upload content such as photographs and music, as well as watch online TV shows and play online games on maximum frequency bands. In addition, GaN RF devices ensure the device’s ability to generate maximum frequency at necessary frequency band, preventing interferences from other frequency bands.

Proliferation of IoT is expected to emerge as one of the popular trends in the GaN RF devices market. Successful implementation of IoT needs data transfer over the network, deprived of human-to-computer interaction. Micro-electrical-mechanical systems and sensors have become an integral part of the IoT devices, and are expected to have a positive influence on demand for semiconductors. Increasing implementation of IoT has resulted into signal congestion, thereby creating the requirement for GaN technology, which can amplify the bandwidth, capacity and power required for communication between interconnected devices.

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6 Key Projections on Future of GaN RF Devices Market for Forecast Period 2017-2026

On the basis of end-user, telecommunications will remain dominant, with revenues poised to account for nearly half share of the market by 2026-end. Aerospace and Defense, and Automotive are also expected to hold major revenue shares of the market during the forecast period. Sales of GaN RF devices for medical devices and industrial end-uses are projected to exhibit a parallel expansion through 2026. Revenues from industrial end-users of GaN RF devices will continue to be sluggish.
Wireless infrastructure will continue to be the most lucrative application of GaN RF devices, with revenues set to account for over two-fifth market share by 2026-end. PV inverter is also expected to remain a financially worthwhile application of GaN RF devices.
GaN RF devices sales for application in hybrid and EV components are projected to ride on the highest CAGR through 2026. HEV charging equipment and wireless infrastructure applications are expected to witness expansion at equal CAGRs through 2026. Satellite communication and CATV will continue to be the least lucrative applications of GaN RF devices.
On the basis of product type, discrete GaN RF devices are anticipated to remain dominant in the market, in terms of revenues. In addition, revenues from discrete GaN RF devices are projected to hold more than four-fifth market share by 2026-end. Demand for module GaN RF devices are expected to remain sluggish in the market.
Asia-Pacific excluding Japan (APEJ) has been anticipated to remain the largest market for GaN RF devices. Revenues from GaN RF devices sales in APEJ will surpass US$ 1,000 Mn by 2026-end. Revenue share of Japan and North America in the market will also remain significant, however revenues from APEJ will remain comparatively larger than those combined from Japan and North America.
Key market players comprised in the report are Infineon, Renesas, Panasonic, Mitsubishi Electric, Toshiba, Hitachi, STMicroelectronics, Bosch, Sumitomo Electric, and Raytheon.

APEJ to Remain Dominant Market for GaN RF Devices

The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.

Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.

Competition Tracking

Most of the vendors in the GaN RF devices market have similar offerings, competing primarily in terms of key factors including support services, performance & quality, price and innovation. Requirement of enormous capital investment for development, innovation, and research for making advancements in GaN RF Devices remains a major concern for new market entrants. This will further intensify the competition between existing players. Key market participants mapped by Fact.MR’s report include Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, and Infineon.

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Table of Content:

Global Outlook
Global GaN RF Devices Market – Executive Summary
Global GaN RF Devices Market Overview
3.1. Introduction
3.1.1. Global GaN RF Devices Market Taxonomy
3.1.2. Global GaN RF Devices Market Definition
3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026
3.2.1. Global GaN RF Devices Market Y-o-Y Growth
3.3. Global GaN RF Devices Market Dynamics
3.4. SiC and GaN-on-Si Device Market Comparison
3.5. Semiconductor Industry Segmentation
3.6. Power Discretes and Modules Competitive Comparison
3.7. WBG Material Cost and Wafer Size Comparison
3.8. Application for GaN Devices in RF Electronic System
3.9. Key Participants Market Presence (Intensity Map) By Region
Global GaN RF Devices Market Analysis and Forecast 2012-2026
4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026
4.1.1. Module Market Size and Forecast, 2012-2026
4.1.1.1. Revenue (US$ Mn) Comparison, By Region
4.1.1.2. Market Share Comparison, By Region
4.1.1.3. Y-o-Y growth Comparison, By Region
4.1.2. Discrete Market Size and Forecast, 2012-2026
4.1.2.1. Revenue (US$ Mn) Comparison, By Region
4.1.2.2. Market Share Comparison, By Region
4.1.2.3. Y-o-Y growth Comparison, By Region
4.2. Global GaN RF Devices Market Size and Forecast By End User, 2012-2026
4.2.1. Wireless Infrastructure Market Size and Forecast, 2012-2026
4.2.1.1. Revenue (US$ Mn) Comparison, By Region
4.2.1.2. Market Share Comparison, By Region
4.2.1.3. Y-o-Y growth Comparison, By Region
4.2.2. Radars and Avionics Market Size and Forecast, 2012-2026
4.2.2.1. Revenue (US$ Mn) Comparison, By Region
4.2.2.2. Market Share Comparison, By Region
4.2.2.3. Y-o-Y growth Comparison, By Region
4.2.3. Power Storage Market Size and Forecast, 2012-2026
4.2.3.1. Revenue (US$ Mn) Comparison, By Region
4.2.3.2. Market Share Comparison, By Region

Continued……………..

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