Key Emerging Trends in Silicon Carbide Market

Northbrook, USA, 2020-Feb-05 — /EPR Network/ —

The report “Silicon Carbide Market by Device (MOSFET, Diode, Module, Bare Die), Wafer Size (2 Inch, 4 Inch, 6-Inch and Above), Application (RF Device and Cellular Base Station, Power Supply and Inverter), Vertical, and Geography – Global Forecast to 2022″, is projected to reach USD 617 million by 2022, at a CAGR of 17.4% between 2017 and 2022.

One of the key factors driving the demand of silicon carbide (SiC) is the ability of SiC devices in semiconductor to perform at high temperature, voltage, and power. SiC also finds increasing application in radio frequency (RF) devices and cellular base stations.

RF devices and cellular base station segment to be the leading application during the forecast period

Based on application, the RF and cellular base station device segment are projected to lead the market due to the growing LTE networks across regions. The APAC and RoW regions, which are in the growth phase, are expected to provide growth opportunities for the silicon carbide devices market. APAC commands the major market share in the RF and cellular base station application segment.

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Cellular base stations are communication stations positioned at fixed geographical locations, mostly for wireless telephone systems. These base stations require reliable semiconductor devices to facilitate higher frequency operations. Although silicon devices were used previously in these stations, the ability of silicon carbide to perform at a higher frequency has led to its increasing appeal and adoption.

Additionally, silicon carbide facilitates fast switching in amplifiers. It is also light in weight, has a compact size, is energy-efficient, and is capable of operating in high frequencies. These features make it a suitable option in RF devices.

SiC discrete device to account for the largest market share during the forecast period

Due to an increased demand for high-power semiconductors, the loads faced by power equipment have increased. This has created a need for electronic devices that can be used in high-temperature and high-voltage environments. SiC discrete devices are a suitable solution for such environments. Therefore, the market for SiC discrete device is anticipated to register a significant CAGR.

The SiC discrete device is further segmented by type into SiC diode, SiC MOSFET, and SiC module. Of these three, the SiC diode segment is projected to hold the largest market share, whereas the market for SiC module is expected to grow at the highest rate during the forecast period.

APAC expected to be the largest market for silicon carbide throughout the forecast period

APAC is the largest consumer of electronics. This region is expected to dominate the silicon carbide market during the forecast period. APAC is expected to witness significant growth in demand for silicon carbide due to increasing awareness about the advantages of this chemical compound, the developing electric vehicle and electric vehicle charging markets in China, the growing focus on renewable energy generation, and rising interest for silicon carbide devices in China and Korea.

North America ranks second in the global silicon carbide market, after APAC. Silicon carbide devices are used increasingly in power supply and inverter applications in North America. The emergence of electric vehicle drive is expected to further strengthen the demand for silicon carbide devices in this region.

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Some of the major market players profiled are STMicroelectronics N.V. (Switzerland), Infineon Technologies AG (Germany), United Silicon Carbide, Inc. (US), Cree Inc. (Wolfspeed) (US), ROHM Semiconductor (Japan), ON Semiconductor (US), General Electric (US), GeneSiC Semiconductor, Inc. (US), Fuji Electric Co., Ltd. (Japan), and Renesas Electronics Corporation (Japan).

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