Sic & Gan Power Semiconductor Market Expected To Reach US$ 2,986.3 Million Revenue, Globally, by 2026

Dublin, Ireland, 2018-Aug-03 — The scope of the FactMR’s report is to analyze the global SiC & GaN power semiconductor market for the forecast period 2017-2026 and offer accurate and unbiased insights to the readers. SiC & GaN power semiconductor suppliers, stakeholders and manufacturers in the global information and communication technology industry can benefit from the analysis offered in this report. Comprehensive analysis regarding the impact of technological advancements such as cloud computing, internet of things (IoT), big data and artificial intelligence is detailed in this report. The comprehensive study throws light on various trends, dynamics and restrains shaping future of the market, which can serve as a platform of further study, interest and understanding for the leading industries, journals and trade magazines pertaining to global Sic & Gan Power Semiconductor Market.

The report commences with introducing the current market scenario for SiC & GaN power semiconductor. The executive summary section of the report offers insights to users regarding the future scope of the global SiC & GaN power semiconductor market. Brief information on the crucial aspects, statistics and facts on the global SiC & GaN power semiconductor keyword market is highlighted in this section.

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Introduction of 5G mobile communication globally is one of the key factors driving the global market for SiC & GaN power semiconductor. Moreover, power semiconductors especially Radio Frequency type is required in mobile communication. Also, companies are focusing to introduce GaN-based power amplifier with high speed. Meanwhile, automotive electronics also accounts for heavy consumption of power semiconductors. With the rise in electric vehicles, the deployment of SiC & GaN power semiconductor in cars has also increased.

Compared to Gallium Nitride (GaN), silicon carbide (SiC) is likely to emerge as the highly preferred material. By 2026 end, SiC is estimated to surpass US$ 2,400 million revenue. Silicon Carbide is helping devices to achieve high energy conversion function, power consumption, and fast charging. SiC power semiconductor devices are being used in devices with high power capacity. Whereas, GaN is used in medium to low power capacity.

Discrete SiC Power Devices to Gain Maximum Traction in the Market

On the basis of components, discrete SiC power devices are likely to gain traction in the market from 2017 to 2026. Discrete SiC power devices are estimated to surpass US$ 1,900 million revenue towards 2026 end. Meanwhile, SiC power modules are also likely to achieve strong growth through 2026. SiC power devices is emerging as the most viable option for next-generation semiconductor elements due to its high frequency, high voltage performance and high temperature.

SiC & GaN power semiconductor to Find Largest Application in Power Supplies

SiC & GaN power semiconductor is likely to find the largest application in Power supplies between 2017 and 2026. Power supplies are estimated to create an incremental opportunity above US$ 700 million between the forecast periods from 2017 to 2026. Increasing demand renewable energy is resulting in the development of power semiconductor devices. Moreover, Silicon Carbide and Gallium Nitride are considered suitable for power semiconductor devices as it helps in reducing on-state resistance and miniaturizing the size of power devices.

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The report also profiles companies that are expected to remain active in the expansion of global SiC & GaN power semiconductor market through 2026, which include VisIC Technologies Ltd, Panasonic Corporation, NXP Semiconductors N.V., GaN Systems Inc., Exagan S.A.S, Cambridge Electronics, Avogy, Inc., Vincotech GmbH, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., Transform, Inc., Alpha & Omega Semiconductor, Renesas Electronics, SEMIKRON International GmbH, Danfoss A/S, Microsemi Corporation, Wolfspeed, Inc., ROHM Semiconductor, Global Power Technologies Group, Fuji Electric Systems Co., Ltd, Fairchild Semiconductor, and Infineon Technologies.

Table of Contents

1. Global Economic Outlook
2. Global SiC & GaN Power Semiconductor Market – Executive Summary
3. Global SiC & GaN Power Semiconductor Market Overview

3.1. Introduction

3.1.1. Global SiC & GaN Power Semiconductor Market Taxonomy

3.1.2. Global SiC & GaN Power Semiconductor Market Definition

3.2. Global SiC & GaN Power Semiconductor Market Size (US$ Mn) and Forecast, 2012-2026

3.2.1. Global SiC & GaN Power Semiconductor Market Y-o-Y Growth

3.3. Global SiC & GaN Power Semiconductor Market Dynamics

3.4. Supply Chain

3.5. Cost Structure

3.6. PESTLE Analysis

3.7. Product Lifecycle

3.8. List of Distributors

3.9. Key Participants Market Presence (Intensity Map) By Region

4. Global SiC & GaN Power Semiconductor Market Analysis and Forecast 2012-2026

4.1. Global SiC & GaN Power Semiconductor Market Size and Forecast By Material Type, 2012-2026

4.1.1. SiC Market Size and Forecast, 2012-2026

4.1.1.1. Revenue (US$ Mn) Comparison, By Region

4.1.1.2. Market Share Comparison, By Region

4.1.1.3. Y-o-Y growth Comparison, By Region

4.1.2. GaN Market Size and Forecast, 2012-2026

4.1.2.1. Revenue (US$ Mn) Comparison, By Region

4.1.2.2. Market Share Comparison, By Region

4.1.2.3. Y-o-Y growth Comparison, By Region

Continued………………………..

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